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dc.contributor.authorDudáš, Ján
dc.contributor.authorGabáni, Stanislav
dc.contributor.authorBagi, Jozef
dc.contributor.authorGoščiaňska, Iwona
dc.contributor.authorHodulíková, Anna
dc.date.accessioned2011-02-08T13:15:49Z
dc.date.available2011-02-08T13:15:49Z
dc.date.issued2010
dc.identifier.citationAdvances in electrical and electronic engineering. 2010, vol. 8, no. 1, p. 29-33.en
dc.identifier.issn1804-3119
dc.identifier.urihttp://hdl.handle.net/10084/84158
dc.description.abstractHigh precision electrical resistance measurements were performed in the low temperature range from 4.2 K up to room temperature on a holmium bulk sample, and on holmium thin films in magnetic field. The X-ray diffraction of Ho films confirmed their preferential crystal orientation and revealed diffraction peaks originating from the h.c.p. structure of Ho and those from inessential holmium dihydrid content. The TN value of these films decreased with decreasing film thickness. Magnetic field applied parallel to the thin film plane caused an increasing suppression of the TN value up to 5 K with increasing flux density value up to 5 T.en
dc.format.extent552056 bytescs
dc.format.mimetypeapplication/pdfcs
dc.language.isoenen
dc.publisherVysoká škola báňská - Technická univerzita Ostravaen
dc.relation.ispartofseriesAdvances in electrical and electronic engineeringen
dc.relation.urihttp://advances.utc.sk/index.php/AEEEen
dc.rightsCreative Commons Attribution 3.0 Unported (CC BY 3.0)
dc.rights© Vysoká škola báňská - Technická univerzita Ostrava
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleInfluence of magnetic field on electric charge trasport in Holmium thin film at low temperatureen
dc.typearticleen
dc.rights.accessopenAccess
dc.type.versionpublishedVersioncs
dc.type.statusPeer-reviewedcs


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Creative Commons Attribution 3.0 Unported (CC BY 3.0)
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